The activation energy (E a) was calculated from the slope ln(I)-1/T plot to be about 0.33 eV, as shown in Figure 8. The LRS I-V curves of Lu2O3 ReRAM devices were plotted on the logarithmic scale, as shown in Figure 9. The linear behavior of I-V curve of the ReRAM devices with a Dasatinib in vitro nearly constant slope value of approximately 1.01 suggests that the ohmic conduction is dominant in LRS conduction. This may be due to stochastic filament formation by accumulated oxide defects/vacancies VX-809 research buy into the Lu2O3 film [29]. Figure 7 Logarithmic plots of I – V characteristics

in Lu 2 O 3 thin film at different temperatures. (a) Double-logarithmic plot of I-V characteristics in Lu2O3 thin film at 303 to 353 K temperature range. (b) Temperature-dependent Verteporfin ic50 V tr plot of Lu2O3 thin film. Figure 8 Arrhenius plot for Lu 2 O 3 ReRAM current conduction. Activation energy obtained from the slope of the log(I) vs. 1/T curves. Figure 9 Double-logarithmic plot of I – V characteristics of Ru/Lu 2 O 3 /ITO ReRAM device at LRS. Figure 10 depicts the memory switching characteristics for successive switching cycle. The resistance ratio between two memory states in Ru/Lu2O3/ITO ReRAM cell is maintained more than 103 during the continuous memory switching, which is useful for NVM applications. Additionally, a good uniformity in resistance values at HRS and LRS was observed. This may be due to the smoother surface

roughness of the Lu2O3 film. Good switching Fossariinae and device uniformity in memory device are an important factor for flexible ReRAM devices. Very few literatures have been reported on cycle-to-cycle (C2C) distribution (switching uniformity) of flexible NVM applications [10, 30–32]. However, device-to-device (D2D) distribution (device uniformity) among different devices is very crucial for successful implementation of NVM technology. Figure 11 shows the Weibull distribution of switching

voltages and resistance values of the Ru/Lu2O3/ITO ReRAM device. Randomly selected 15 ReRAM cells were measured for 100 switching cycle of each device. A very small dispersion was observed in both parameters as shown. Figure 10 Endurance characteristics of Ru/Lu 2 O 3 /ITO ReRAM device for continuous voltage sweeping operation. Figure 11 Distributions of voltages for cycle-to-cycle and device-to-device measurements. Weibull distribution of set/reset voltages for (a) C2C and (b) D2D measurements. HRS and LRS distributions of the device for (c) C2C and (d) D2D measurements. To understand the potentiality of Ru/Lu2O3/ITO flexible memory device, the reliability characteristics of impulse switching endurance, data retention, and mechanical endurance were characterized. Figure 12 shows the pulse switching endurance characteristics of the flexible memory device under ±2 V of impulse voltages, measured at room temperature and 85°C.