Phys Rev B 1990, 41:7192–7194.CrossRef 35. Zhu YW, Sow CH, Yu T, Zhao Q, Li PH, Shen ZX, Yu DP, Thong JTL: Co-synthesis of ZnO–CuO nanostructures by directly heating brass in air. Adv Funct Mater 2006, 16:2415–2422.CrossRef 36. Vanheusden K, Warren WL, Seager CH, Tallant DR, Voigt JA, Gnade BE: Mechanisms behind green photoluminescence in
ZnO phosphor powders. J Appl Phys 1996, 79:7983–7990.CrossRef 37. Dai Y, Zhang Y, Li QK, Nan CW: Synthesis and optical properties of tetrapod-like zinc oxide nanorods. see more Chem Phys Lett 2002, 358:83–86.CrossRef 38. Tian SQ, Yang F, Zeng DW, Xie CS: Solution-processed gas sensors based on ZnO nanorods array with an exposed (0001) facet for enhanced gas-sensing properties. J Phys Chem C 2012, 116:10586–10591.CrossRef 39. An W, Wu XJ, Zeng XC: Adsorption of O2, H2, CO, NH3, and NO2 on ZnO nanotube: a density functional theory study. J Phys Chem C 2008, 112:5747–5755.CrossRef 40. Polarz S, Roy A, Lehmann M, Driess M, Kruis FE, Hoffmann A, Zimmer P: Structure–property-function relationships in nanoscale oxide sensors: a case study based on zinc oxide. Adv Funct Mater 2007, 17:1385–1391.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions DHX participated
in the design of the study, carried PF-6463922 datasheet out the experiments, and performed the statistical analysis, as well as drafted the manuscript. DHF participated in the design of the study and provided the experimental guidance. WZS took charge of the theoretical guidance and revised the manuscript. All authors read and approved the final manuscript.”
“Background During the last decade, silicon nanowires (Si NWs) Glutamate dehydrogenase have been studied extensively to be employed in the modern electronic industry in the direction of the size reduction and efficiency boost of the devices [1]. Because of the high surface to volume ratio, Si NWs’ properties depend firmly on their surface conditions and surface
terminations, in particular. The oxidation of Si NWs, when exposed to ambient air, is believed to have a detrimental effect on their electrical properties due to the low quality of the oxide, giving rise to the uncontrolled interface states and enhanced carrier recombination rates [2]. This necessitates protection of Si NWs’ surfaces against oxidation via termination by various chemical moieties (i.e., alkyls and alkenyls) [3, 4]. However, to better prevent oxide formation, a deeper understanding of the Si NW’s oxidation mechanisms and kinetics is essential. For planar Si, the widely known Deal-Grove (DG) model considers the interfacial oxidation reaction and oxidant diffusion as the major rate-determining reaction steps for short and long oxidation times, respectively [5]. DG model has undergone a number of modifications due to imprecise prediction of the oxidation behavior at low temperatures (T ≤ 700°C) in convex/concave surfaces and for very thin oxide layers [6–8].